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Sensors 2010, 10, 388-399; doi:10.3390/s100100388
OPEN ACCESS

sensors
ISSN 1424-8220

Article

Characterization, Modeling and Design Parameters
Identification of Silicon Carbide Junction Field Effect
Transistor for Temperature Sensor Applications
Tarek Ben Salah 1,2,*, Sofiane Khachroumi 2 and Hervé Morel 1
1

2

Ampere, CNRS UMR 5005, INSA de Lyon, bâtiment Léonard de Vinci, 69621 Villeurbanne,
France; E-Mail: herve.morel@insa-lyon.fr
Electrical System Laboratory, UR03ES05, ENIT, Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia;
E-Mail: sofianekha204@gmail.com

* Author to whom correspondence should be addressed; E-Mail: tarek.bensalah@insalien.org;
Tel.: +216-71-86-37-53; Fax: +216-71-86-37-53.
Received: 6 November 2009; in revised form: 30 November 2009 / Accepted: 21 December 2009 /
Published: 5 January 2010

Abstract: Sensor technology is moving towards wide-band-gap semiconductors providing
high temperature capable devices. Indeed, the higher thermal conductivity of silicon
carbide, (three times more than silicon), permits better heat dissipation and allows better
cooling and temperature management. Though many temperature sensors have already
been published, little endeavours have been invested in the study of silicon carbide
junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are
now mature enough and it is close to be commercialized. The use of its specific properties
versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage
characteristics are characterized at different temperatures. The saturation current and its
on-resistance versus temperature are successfully extracted. It is demonstrated that these
parameters are proportional to the absolute temperature. A physics-based model is also
presented. Relationships between on-resistance and saturation current versus temperature
are introduced. A comparative study between experimental data and simulation results is
conducted. Important to note, the proposed model and the experimental results reflect a
successful agreement as far as a temperature sensor is concerned.
Keywords: silicon carbide; SiC-JFET sensor; modelling; design parameters

Sensors 2010, 10

389

1. Introduction
Future semiconductor devices should have the ability to work in harsh environments. Indeed,
neither high temperature nor aggressive chemical application demands can be fulfilled by devices
based on silicon semiconductor technology [1-...
Sensors 2010, 10, 388-399; doi:10.3390/s100100388
sensors
ISSN 1424-8220
www.mdpi.com/journal/sensors
Article
Characterization, Modeling and Design Parameters
Identification of Silicon Carbide Junction Field Effect
Transistor for Temperature Sensor Applications
Tarek Ben Salah
1,2,
*, Sofiane Khachroumi
2
and Hervé Morel
1
1
Ampere, CNRS UMR 5005, INSA de Lyon, bâtiment Léonard de Vinci, 69621 Villeurbanne,
France; E-Mail: herve.morel@insa-lyon.fr
2
Electrical System Laboratory, UR03ES05, ENIT, Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia;
E-Mail: sofianekha204@gmail.com
* Author to whom correspondence should be addressed; E-Mail: tarek.bensalah@insalien.org;
Tel.: +216-71-86-37-53; Fax: +216-71-86-37-53.
Received: 6 November 2009; in revised form: 30 November 2009 / Accepted: 21 December 2009 /
Published: 5 January 2010
Abstract: Sensor technology is moving towards wide-band-gap semiconductors providing
high temperature capable devices. Indeed, the higher thermal conductivity of silicon
carbide, (three times more than silicon), permits better heat dissipation and allows better
cooling and temperature management. Though many temperature sensors have already
been published, little endeavours have been invested in the study of silicon carbide
junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are
now mature enough and it is close to be commercialized. The use of its specific properties
versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage
characteristics are characterized at different temperatures. The saturation current and its
on-resistance versus temperature are successfully extracted. It is demonstrated that these
parameters are proportional to the absolute temperature. A physics-based model is also
presented. Relationships between on-resistance and saturation current versus temperature
are introduced. A comparative study between experimental data and simulation results is
conducted. Important to note, the proposed model and the experimental results reflect a
successful agreement as far as a temperature sensor is concerned.
Keywords: silicon carbide; SiC-JFET sensor; modelling; design parameters
OPEN ACCESS
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